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Data Sheet No. PD 96936A

IRIS-A6351
Features
? Oscillator is provided on the monolithic control IC with adopting On-ChipTrimming technology. ? Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. ? Low start-up circuit current (50uA max) ? Built-in Active Low-Pass Filter for stabilizing the operation in case of light load ? Avalanche energy guaranteed MOSFET with high VDSS ? The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. ? No VDSS de-rating is required. ? Built-in constant voltage drive circuit ? Various kinds of protection functions ? Pulse-by-pulse Overcurrent Protection (OCP) ? Overvoltage Protection with latch mode (OVP) ? Thermal Shutdown with latch mode (TSD)
IRIS-A6351 650 3.95Ω Type

INTEGRATED SWITCHER
Package Outline

8 Lead PDIP

Key Specifications
MOSFET VDSS(V) RDS(ON) MAX ACinput(V) 230±15% 85 to 264 Pout(W) Note 1 10 8

Descriptions

Note 1: The Pout(W) represents the thermal rating at PRC Operation, and the peak power output is obtained by approximately 120 to 150% of the above listed. When the output voltage is low and ON-duty is narrow, the Pout(W) shall become lower than that of above.

IRIS-A6351 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).

Typical Connection Diagram

IRIS-A6351
1 2 3 4 8 7 6 5

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IRIS-A6351
Absolute Maximum Ratings (Ta=25℃) (Refer Gnd 2 and 5) ℃
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Symbol IDpeak IDMAX

Definition Drain Current *1 Maximum switching current *5

Terminals Max. Ratings 8 2.36 8 2.36

Units A A

EAS Vin Vth P D1 P D2 TF Top Tstg Tch

Single pulse avalanche energy *2 Input voltage for control part O.C.P/F.B Pin voltage Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature

8-1 3-2 4-2 8-1 3-2 -

56 35 6 1.35 0.14 -20 ~ +125 -20 ~ +125 -40 ~ +125 150

mJ V V W W ℃ ℃ ℃ ℃

Note Single Pulse V1-2=0.82V Ta=-20~+125℃ Single Pulse VDD=99V,L=20mH IL=2.36A

*6 Specified by Vin×Iin
Refer to recommended operating temperature

*1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by V1-2 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current. *6 When embedding this hybrid IC onto the printed circuit board (board size 15mm×15mm)
Fig.1 V1-2

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IRIS-A6351

Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified)

Symbol Vin(ON) Vin(OFF) Iin(ON) Iin(OFF) TOFF(MAX) Vth IOCP/FB Vin(OVP)

Definition Operation start voltage Operation stop voltage *7 Circuit current in operation Circuit current in non-operation Maximum OFF time O.C.P/F.B Pin threshold voltage O.C.P/F.B Pin extraction current O.V.P operation voltage

MIN 15.8 9.1 12 0.7 0.7 23.2 7.9 135

Ratings TYP 17.6 10.1 15 0.76 0.8 25.5 -

MAX 19.4 11.1 5 50 18 0.82 0.9 27.8 70 10.5 -

Units V V mA ?A ?sec V mA V ?A V ℃

Test Conditions
Vin=0→19.4V Vin=19.4→9.1V

Vin=15V

Vin=0→27.8V Vin=27.8→ (Vin(OFF)-0.3)V Vin=27.8→7.9V

Iin(H) Latch circuit sustaining current *8 Vin(La.OFF) Latch circuit release voltage *7,8 Tj(TSD) Thermal shutdown operating temperature

-

*7 The relation of Vin(OFF)>Vin(La.OFF) is applied for each product. *8 The latch circuit means a circuit operated O.V.P and T.S.D.

Electrical Characteristics (for MOSFET)
(Ta=25℃) unless otherwise specified

Symbol VDSS IDSS

Definition Drain-to-Source breakdown voltage Drain leakage current

MIN 650 *9 -

Ratings TYP -

MAX 300 3.95 250 52

Units V ?A Ω nsec ℃/W

Test Conditions
ID=300?A V2- 1=0V(short) VDS =650V V2- 1=0V(short) V3- 2 =10V ID=0.4A

RDS(ON) On-resistance tf Switching time θch-F Thermal resistance

Between channel and internal frame

*9 Internal frame temperature (TF) is measured at the root of the Pin 5.

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IRIS-A6351
IRIS-A6351 A.S.O. temperature derating coefficient curve 100 100

IRIS-A6351
MOSFET   A.S.O. Curve

Ta=25?C Single Pulse

A.S.O. temperature derating coefficient[%]

80 10 60 Drain Current ID[A]
Drain current limit by ON resistance 0.1ms

1

1ms

40

20

0.1

ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use.

0 0 20 40 60 80 100 120 0.01 1 10 100 1000 Drain-to-Source Voltage VDS[V]

Internal frame temperature TF [ ℃]

IRIS-A6351
Maximum Switching current derating curve Ta= 20~+125 ℃             ‐

IRIS-A6351 Avalanche energy derating curve 100

3

EAS temperature derating coefficient [%]

Maximum Switchng Current IDMAX[A]

80

2

60

40

1

20

0 0.8 0.9 1 V 1-2 [V] 1.1 1.2

0 25 50 75 100 ℃] 125 150 Channel temperature Tch [

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IRIS-A6351
IRIS-A6351 MOSFET Ta-PD1 Curve 1.6 0.16 IRIS-A6351 TF-PD2 Curve for Control IC

PD1=1.35[W]
1.4 1.2 Power dissipation PD1[W] Power dissipation PD2[W] 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta[℃] 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0

PD2=0.14[W]

20 40 60 80 100 120 Internal frame temperature TF[℃]

140

IRIS-A6351 Transient thermal resistance curve 10 Transient thermal resistance θch-a[ ℃ /W]

1

0.1

0.01

1?

10?

100?
time t [sec]

1m

10m

100m

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IRIS-A6351 Block Diagram
3 Vin

OVP UVLO
+ -

+ -

REG
Latch Internal Bias Delay

TSD
+ -

REG

7,8 D

PWM OSC

Latch

S Q R

Drive 1 S OCP
+ -

Comp. Icont

4 OCP/FB 2,5 GND

Lead Assignments
Pin Assignment (Top View) Source GND Vin OCP/FB 1 2 3 4 8 7 6 5 Drain Drain N.C. GND

Pin No.

1 2 3 4 5 6 7,8

Symbol S GND Vin OCP/FB GND N.C. D

Description Source Pin Ground Pin Power supply Pin Overcurrent / Feedback Pin Ground Pin Drain Pin

Function MOSFET source Ground Input of power supply for control circuit Input of overcurrent detection signal / constant voltage control signal Ground Not Connected MOSFET drain

Other Functions
O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit

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IRIS-A6351

Case Outline
a. Type Number b. Lot Number 1st letter:The last digit of year 2nd letter:Month (1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec.) 3rd letter:Week 1~3 : Arabic numerals c. Registration Number

8

7 6

5

A6351

I R
1 2 3 4

a

b c

Material of Pin : Cu Treatment of Pin : Solder plating Weight: Approx. 0.51g

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information.

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