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BSP297中文资料

BSP 297

SIPMOS ? Small-Signal Transistor
? N channel ? Enhancement mode ? Logic Level ? VGS(th) = 0.8...2.0V

Type
BSP 297
Type BSP 297

VDS 200 V

ID 0.65 A

Ordering Code Q67000-S068

Pin 1 Pin 2 Pin 3 Pin 4

G

D

S

D

RDS(on) 2?

Package SOT-223

Tape and Reel Information E6327

Marking BSP 297

Maximum Ratings Parameter Drain source voltage Drain-gate voltage RGS = 20 k? Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current TA = 25 °C DC drain current, pulsed TA = 25 °C Power dissipation TA = 25 °C

Symbol VDS VDGR
VGS Vgs ID
IDpuls
Ptot

Values

Unit

200

V

200 ± 14 ± 20
A 0.65

2.6 W
1.8

Semiconductor Group

1

Sep-12-1996

BSP 297

Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1

Symbol
Tj Tstg RthJA RthJS

Values

Unit

-55 ... + 150 °C

-55 ... + 150

≤ 70

K/W

≤ 10

E

55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol min.

Values

typ.

max.

Static Characteristics

Drain- source breakdown voltage

V(BR)DSS

VGS = 0 V, ID = 0.25 mA, Tj = 25 °C

200

-

Gate threshold voltage

VGS(th)

VGS=VDS, ID = 1 mA

0.8

1.4

Zero gate voltage drain current

IDSS

VDS = 200 V, VGS = 0 V, Tj = 25 °C

-

0.1

VDS = 200 V, VGS = 0 V, Tj = 125 °C

-

8

VDS = 130 V, VGS = 0 V, Tj = 25 °C

-

-

Gate-source leakage current

IGSS

VGS = 20 V, VDS = 0 V

-

10

Drain-Source on-state resistance

RDS(on)

VGS = 10 V, ID = 0.65 A

-

1.6

VGS = 4.5 V, ID = 0.65 A

-

2

-
2
1 50 100
100
2 3.3

Unit
V
?A nA nA ?

Semiconductor Group

2

Sep-12-1996

BSP 297

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

min.

typ.

max.

Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 0.65 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 ? Rise time VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 ? Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 ? Fall time VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50 ?

gfs 0.5
Ciss -
Coss -
Crss -
td(on)
tr
td(off)
tf
-

1.15 -

300

400

40

60

20

30

8

12

15

25

120

160

50

70

Unit S pF
ns

Semiconductor Group

3

Sep-12-1996

BSP 297

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol min.

Values

Unit

typ.

max.

Reverse Diode

Inverse diode continuous forward current IS

TA = 25 °C

-

Inverse diode direct current,pulsed

ISM

TA = 25 °C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = 1.3 A, Tj = 25 °C

-

A

-

0.65

-

2.6

V

0.9

1.1

Semiconductor Group

4

Sep-12-1996

BSP 297

Power dissipation Ptot = ?(TA)

2.0

W

Ptot

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0.0 0 20 40 60 80 100 120 °C 160
TA

Safe operating area ID=f(VDS) parameter : D = 0, TC=25°C

Drain current
ID = ?(TA) parameter: VGS ≥ 10 V

0.70 A
0.60 ID 0.55
0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00
0

20 40 60 80 100 120 °C 160
TA

Transient thermal impedance
Zth JA = ?(tp) parameter: D = tp / T

10 2 K/W

ZthJC

10 1

10 0

Semiconductor Group

10 -1

10 -2

10 -3

single pulse

D = 0.50 0.20 0.10 0.05 0.02 0.01

10 -4 10 -8

10 -7

10 -6

10 -5

10 -4

10 -3

10 -2 10 -1s 10 0
tp

5

Sep-12-1996

BSP 297

Typ. output characteristics
ID = ?(VDS) parameter: tp = 80 ?s

1.5 Ptot = 2W

ji

A

lkhgfe d

c

1.3

ID

1.2

1.1

1.0

0.9

VGS [V] a 2.0 b 2.5 c 3.0 d 3.5 e 4.0

0.8

b f 4.5

g 5.0
0.7
h 6.0

0.6

i 7.0

0.5

j 8.0

k 9.0

0.4

a l 10.0

0.3

0.2

0.1 0.0
0.0 1.0 2.0 3.0 4.0 5.0

V 7.0
VDS

Typ. drain-source on-resistance
RDS (on) = ?(ID) parameter: tp = 80 ?s, Tj = 25 °C

6.5

?

a

b

5.5 RDS (on) 5.0

4.5

4.0

3.5

3.0

2.5

c

2.0 1.5

d i j el ghkf

1.0 VGS [V] =

0.5

abcdef 2.0 2.5 3.0 3.5 4.0 4.5

0.0

ghi j 5.0 6.0 7.0 8.0

kl 9.0 10.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 A 0.9
ID

Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 ?s

Typ. forward transconductance gfs = f (ID) parameter: tp = 80 ?s,

2.2

A

ID

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2
0.0 0 1 2 3 4 5 6 7 8 V 10 VGS

Semiconductor Group

6

1.8

S gfs 1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.0

0.4

0.8

1.2

1.6 A 2.2

ID

Sep-12-1996

BSP 297

Drain-source on-resistance
RDS (on) = ?(Tj) parameter: ID = 0.65 A, VGS = 10 V

5.0
?

RDS (on) 4.0 3.5

3.0

2.5

98%

2.0

typ

1.5

1.0

0.5

0.0

-60

-20

20

60

100 °C 160

Tj

Gate threshold voltage
VGS (th) = ?(Tj) parameter: VGS = VDS, ID = 1 mA

4.6 V
4.0 VGS(th) 3.6

3.2

2.8

2.4 98%
2.0

1.6

typ

1.2 2%
0.8

0.4

0.0

-60

-20

20

60

100 °C 160

Tj

Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz
10 3

Forward characteristics of reverse diode IF = ?(VSD) parameter: Tj, tp = 80 ?s
10 1

pF C
10 2

A Ciss
I
F
10 0

10 1

Coss Crss

10 0 0

5 10 15 20 25 30 V 40 VDS

Semiconductor Group

7

10 -1

Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)

10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
VSD

Sep-12-1996

BSP 297

Drain-source breakdown voltage V(BR)DSS = ?(Tj)

Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25°C

240

V

230 V(BR)DSS
225

220

215

210

205

200

195

190

185

180

-60

-20

20

60

100 °C 160

Tj

Semiconductor Group

8

Sep-12-1996

BSP 297
Package outlines SOT-223 Dimensions in mm

Semiconductor Group

9

Sep-12-1996